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switching HXY MOSFET IXYH50N65C3H1 HXY designed for high junction temperature and low EMI environments

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switching HXY MOSFET IXYH50N65C3H1 HXY designed for high junction temperature and low EMI environments

Pd - Power Dissipation : 250W

Td(off) : 136ns

Td(on) : 26ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Input Capacitance(Cies) : 1.52nF@25V

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 3.2V@250uA

Gate Charge(Qg) : 57nC@15V

Reverse Recovery Time(trr) : 56ns

Switching Energy(Eoff) : 430uJ

Turn-On Energy (Eon) : 900uJ

Description : IGBT 650V 70A 250W Through Hole TO-247

Mfr. Part # : IXYH50N65C3H1-HXY

Model Number : IXYH50N65C3H1-HXY

Package : TO-247

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Product Overview

The IXYH50N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Model: IXYH50N65C3H1
Package: TO-247
Packing: 30PCS

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VCE	Collector emitter voltage				650	V
IC	DC collector current(1)	TC = 25C			70	A
IC	DC collector current(1)	TC = 100C			40	A
ICM	Pulsed collector current	TC = 25C			160	A
IF	Maximum Diode forward current(1)	TC = 25C			70	A
IF	Maximum Diode forward current(1)	TC = 100C			40	A
IFM	Diode pulsed current	TC = 25C			160	A
VGE	Gate-Emitter voltage	TVJ = 25C	-20		+20	V
VGE	Transient Gate-Emitter Voltage	(tp 10s, D < 0.010), TVJ = 25C	-30		+30	V
Ptot	Power Dissipation	TC = 25C			250	W
Ptot	Power Dissipation	TC = 100C			125	W
TVJ	Operating Junction Temperature Range		-40		+175	C
TSTG	Storage Temperature Range		-55		+150	C
Electrical Characteristics
V(BR)CES	Collector - Emitter Breakdown Voltage	VGE = 0V , IC = 0.5mA	650			V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 40A		1.6	2.1	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 40A ,TVJ = 125C		1.85		V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 40A ,TVJ = 175C		1.95		V
VF	Diode forward voltage	VGE = 0V , IC =40A		1.8		V
VF	Diode forward voltage	VGE = 0V , IC =40A ,TVJ = 125C		1.5		V
VF	Diode forward voltage	VGE = 0V , IC = 40A ,TVJ = 175C		1.35		V
VGE(th)	Gate-Emitter threshold voltage	VGE = VCE, IC = 250mA	3.2	4	4.8	V
ICES	Zero Gate voltage Collector current	VCE = 650V , VGE = 0V			40	mA
IGES	Gate-Emitter leakage current	VGE = 20V , VCE = 0V			100	nA
gfs	Transconductance	VGE =15V, IC = 40A		55		S
Dynamic Characteristics
Cies	Input Capacitance	VGE = 0V, VCE = 25V, f = 1MHz		1520		pF
Coes	Output Capacitance			110		pF
Cres	Reverse Transfer Capacitance			11		pF
Qg	Gate Charge	VGE = 0 to 15V VCE = 520V, IC = 40A		57		nC
Qge	Gate to Emitter charge			6.5		nC
Qgc	Gate to Collector charge			17.5		nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15		26		ns
tr	Turn-On Rise Time			28		ns
td(off)	Turn-Off DelayTime			136		ns
tf	Turn-Off Fall Time			34		ns
Eon	Turn-on energy			0.9		mJ
Eoff	Turn-off energy			0.43		mJ
Ets	Total switching energy			1.33		mJ
Diode Recovery Characteristics
Trr	Reverse recovery time	VR = 400 V, IF = 40 A, di/dt = 400 A/S		56		ns
Qrr	Reverse recovery charge			0.27		mC
Irrm	Peak reverse recovery current			8.0		A
Thermal Resistance
RJA	Thermal resistance: junction - ambient				40	C/W
RJC	Thermal resistance: junction - case IGBT			0.6		C/W
RJC	Thermal resistance: junction - case Diode			0.65		C/W

2509181737_HXY-MOSFET-IXYH50N65C3H1-HXY_C49003391.pdf

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