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High Current Pulse NPN Transistor DIODES FMMT415TD Designed for Avalanche Mode Operation Applications

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High Current Pulse NPN Transistor DIODES FMMT415TD Designed for Avalanche Mode Operation Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 10uA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 40MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 100V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 100V 500mA 40MHz 500mW Surface Mount SOT-23

Mfr. Part # : FMMT415TD

Model Number : FMMT415TD

Package : SOT-23

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Product Overview

The FMMT415/417 are NPN silicon planar bipolar transistors engineered for avalanche mode operation. Their design, featuring tight process control and low inductance packaging, enables the generation of high-current pulses with rapid edges. These devices are specifically designed for avalanche mode applications, offering high peak avalanche current and robust breakdown voltages.

Product Attributes

Brand: Diodes Incorporated
Certifications: AEC-Q101 Qualified
Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
Packaging: SOT23
Material: Molded Plastic, Green Molding Compound

Technical Specifications

Characteristic	Symbol	FMMT415	FMMT417	Unit	Test Condition
Breakdown Voltage	BVCES	260	320	V	IC = 1mA, TJ = -55 to +150C
	BVCEO	100	100	V	IC = 100A
	BVEBO	6	6	V	IE = 100A
Collector Cutoff Current	ICBO		100 nA	nA	VCB = 180V
Collector Cutoff Current	ICBO		10 A	A	VCB = 180V, TJ = +100C
Emitter Cutoff Current	IEBO		100	nA	VEB = 4V
Static Forward Current Transfer Ratio	hFE	25			IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage	VCE(sat)		500	mV	IC = 10mA, IB = 1mA
Base-Emitter Saturation Voltage	VBE(sat)		900	mV	IC = 10mA, IB = 1mA
Pulsed Current in Second Breakdown	IUSB	25	35	A	VC = 200V, CCE = 620pF
Pulsed Current in Second Breakdown	IUSB			A	VC = 250V, CCE = 620pF
Collector-Emitter Inductance	Lce		2.5	nH	Standard SOT23 leads
Output Capacitance	Cobo		8	pF	VCB = 20V, IE = 0, f = 100MHz
Transition Frequency	fT	40		MHz	VCE = 20V, IC = 10mA, f = 20MHz
Peak Avalanche Current (Pulse Width = 20ns)	ICM	60	60	A
Continuous Collector Current	IC	500	500	mA
Power Dissipation	PD	500	500	mW	@TA = +25C (Note 5)
Thermal Resistance, Junction to Ambient	RJA	250	250	C/W	@TA = +25C (Note 5)
Thermal Resistance, Junction to Lead	RJL	197	197	C/W	(Note 6)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150		C
Electrostatic Discharge (Human Body Model)	ESD HBM	4,000		V	JEDEC Class 3A
Electrostatic Discharge (Machine Model)	ESD MM	400		V	C

Applications

Laser Diode Drivers for Ranging and Measurement (LIDAR)
Radar Systems
Fast Edge Switch Generator
High Speed Pulse Generators

2304140030_DIODES-FMMT415TD_C460073.pdf

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