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High Current PNP Medium Power Low Saturation Transistor DIODES ZX5T951GQTC Designed for Automotive

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High Current PNP Medium Power Low Saturation Transistor DIODES ZX5T951GQTC Designed for Automotive

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 3W

Transition frequency(fT) : 120MHz

type : PNP

Current - Collector(Ic) : 5.5A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 60V 5.5A 120MHz 3W Surface Mount SOT-223

Mfr. Part # : ZX5T951GQTC

Model Number : ZX5T951GQTC

Package : SOT-223

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Product Overview

The ZX5T951GQ is a 60V PNP medium power, low saturation bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It offers high continuous collector current, peak pulse current, and low saturation voltage, making it suitable for various power switching and driving applications.

Product Attributes

Brand: Diodes Incorporated
Product Type: PNP Medium Power Low Saturation Transistor
Package: SOT223
Material: Molded Plastic, "Green" Molding Compound
Certifications: AEC-Q101 Qualified, PPAP Capable, IATF16949 Certified Facilities
Finish: Lead-Free, RoHS Compliant, Halogen- and Antimony-Free ("Green" Device)
Flammability Rating: UL 94V-0
Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Emitter Breakdown Voltage	BVCEO	-60	V	IC = -10mA
High Continuous Collector Current	IC	-5.5	A
Peak Pulse Current	ICM	-15	A
Low Saturation Voltage	VCE(sat)	< -70	mV	@ -1A
Low Equivalent On-Resistance	RSAT	39	m
Static Forward Current Transfer Ratio	hFE	100 - 250		IC = -10mA, VCE = -1V
		100 - 200		IC = -2A, VCE = -1V
		45 - 90		IC = -5A, VCE = -1V
		10 - 25		IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage	VCE(sat)	-15 to -25	mV	IC = -100mA, IB = -10mA
		-55 to -70	mV	IC = -1A, IB = -100mA
		-90 to -120	mV	IC = -2A, IB = -200mA
		-195 to -250	mV	IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage	VBE(sat)	-1030 to -1150	mV	IC = -5A, IB = -500mV
Base-Emitter Turn-On Voltage	VBE(on)	-920 to -1020	mV	IC = -5A, VCE = -1V
Output Capacitance	Cobo	48	pF	VCB = -10V, f = 1MHz
Transition Frequency	fT	120	MHz	VCE = -10V, IC = -100mA, f = 50MHz
Switching Time (Turn-on)	ton	39	ns	VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA
Switching Time (Turn-off)	toff	370	ns	VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA
Power Dissipation	PD	3.0	W	@ TA = +25C (Note 5)
Thermal Resistance, Junction to Ambient	RJA	42	C/W	@ TA = +25C (Note 5)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C

Applications

DC-DC Converters
MOSFET & IGBT Gate Drivers
Charging Circuits
Power Switches
Motor Control

2412251117_DIODES-ZX5T951GQTC_C5249279.pdf

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