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100V NPN Transistor DIODES MJD31C-13 with 3A Collector Current and Lead Free Green Molding Compound

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100V NPN Transistor DIODES MJD31C-13 with 3A Collector Current and Lead Free Green Molding Compound

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 1uA

Pd - Power Dissipation : 15W

Transition frequency(fT) : 3MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 100V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 100V 3A 3MHz 15W Surface Mount DPAK-3

Mfr. Part # : MJD31C-13

Model Number : MJD31C-13

Package : DPAK-3

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Product Overview

The MJD31C is a 100V NPN High Voltage Transistor designed for power switching or amplification applications. It offers a high continuous collector current of 3A and a peak pulse current of 5A. This device is complementary to the MJD32C PNP type and is available in a TO252 (DPAK) package. It is qualified to AEC-Q101 standards for high reliability and is a "Green" device, being totally lead-free and fully RoHS compliant.

Product Attributes

Brand: Diodes Incorporated
Product Type: NPN High Voltage Transistor
Package: TO252 (DPAK)
Material: Molded Plastic, "Green" Molding Compound
Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Complementary PNP Type: MJD32C

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Emitter Breakdown Voltage	BVCEO	100	V	IC = 30mA, IB = 0
Continuous Collector Current	IC	3	A	@TA = +25C
Peak Pulse Collector Current	ICM	5	A	@TA = +25C
Collector-Emitter Saturation Voltage	VCE(sat)	1.2	V	IC = 3.0A, IB = 375mA, @TA = +25C
Base-Emitter Turn-On Voltage	VBE(on)	1.8	V	IC = 3A, VCE = 4V, @TA = +25C
DC Current Gain	hFE	25 - 50	-	VCE = 4V, IC = 1A to 3A, @TA = +25C
Current Gain-Bandwidth Product	fT	3.0	MHz	IC = 500mA, VCE = 10V, f = 1MHz
Power Dissipation	PD	15	W	@TA = +25C
Thermal Resistance, Junction to Ambient Air	RJA	32	C/W	Note 5, @TA = +25C
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C	-

1912111437_DIODES-MJD31C-13_C435909.pdf

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