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Medium Power PNP Silicon Planar Darlington Transistors DIODES ZTX705 Featuring 120 Volt VCEO and High Gain 3K

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Medium Power PNP Silicon Planar Darlington Transistors DIODES ZTX705 Featuring 120 Volt VCEO and High Gain 3K

Current - Collector Cutoff : 10uA

Pd - Power Dissipation : 1W

DC Current Gain : 3000

Transition frequency(fT) : 160MHz

type : PNP

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 120V

Operating Temperature : -55℃~+200℃@(Tj)

Description : 1W 3000 PNP 1A 120V TO-92 Single Bipolar Transistors RoHS

Mfr. Part # : ZTX705

Model Number : ZTX705

Package : TO-92

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Product Description

PNP Silicon Planar Medium Power Darlington Transistors designed for applications such as lamp, solenoid, and relay drivers. These transistors offer a 120 Volt VCEO rating, 1 Amp continuous current capability, and a high gain of 3K at IC=1 Amp, with a power dissipation of 1 Watt.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	ZTX704 (Min)	ZTX704 (Max)	ZTX704 (Unit)	ZTX705 (Min)	ZTX705 (Max)	ZTX705 (Unit)	Conditions
Collector-Base Voltage	VCBO	-120		V	-140		V
Collector-Emitter Voltage	VCEO	-100		V	-120		V
Emitter-Base Voltage	VEBO	-10		V	-10		V
Peak Pulse Current	ICM	-4		A	-4		A
Continuous Collector Current	IC	-1		A	-1		A
Power Dissipation	Ptot	1		W	1		W	at Tamb = 25C
Operating and Storage Temperature Range	Tj:Tstg	-55	+200	C	-55	+200	C
Collector-Base Breakdown Voltage	V(BR)CBO	-120		V	-140		V	IC=-100A
Collector-Emitter Breakdown Voltage	VCEO(SUS)	-100		V	-120		V	IC=-10mA*
Emitter-Base Breakdown Voltage	V(BR)EBO	-10		V	-10		V	IE=-100A
Collector Cut-Off Current	ICBO	-0.1	-10	A	-0.1	-10	A	VCB=-100V, VCB=-120V, VCB=-100V, Tamb=100C, VCB=-120V, Tamb=100C
Collector Cut-Off Current	ICES	-10		A	-10		A	VCES=-80V
Emitter Cut-Off Current	IEBO	-0.1		A	-0.1		A	VEB=-8V
Collector-Emitter Saturation Voltage	VCE(sat)	-1.3	-2.5	V	-1.3	-2.5	V	IC=-1A, IB=-1mA; IC=-2A, IB=-2mA
Base-Emitter Saturation Voltage	VBE(sat)	-1.8		V	-1.8		V	IC=-1A, IB=-10mA*
Base-Emitter Turn-On Voltage	VBE(on)	-1.7		V	-1.7		V	IC=-1A, VCE=-5V*
Static Forward Current Transfer Ratio	hFE	3K	30K		3K	2K		IC=-10mA, VCE=-5V; IC=-100mA, VCE=-5V; IC=-1A, VCE=-5V; IC=-2A, VCE=-5V
Transition Frequency	fT	160	Typical	MHz	160	Typical	MHz	IC=-100mA, VCE=-10V, f=20MHz
Input Capacitance	Cibo	90	Typical	pF	90	Typical	pF	VEB=-0.5V, f=1MHz
Output Capacitance	Cobo	15	Typical	pF	15	Typical	pF	VCE=-10V, f=1MHz
Switching Times	ton	0.6	Typical	s	0.6	Typical	s	IC=-0.5A, VCE=-10V, IB1=IB2=-0.5mA
Switching Times	toff	0.8	Typical	s	0.8	Typical	s	IC=-0.5A, VCE=-10V, IB1=IB2=-0.5mA

2004082132_DIODES-ZTX705_C507845.pdf

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