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Power PNP transistor GOODWORK PBSS5350Z-GK with high collector current gain and low heat generation

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Power PNP transistor GOODWORK PBSS5350Z-GK with high collector current gain and low heat generation

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 6V

Pd - Power Dissipation : 1.35W

Transition frequency(fT) : 100MHz

type : PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 1.35W PNP 3A 50V SOT-223 Single Bipolar Transistors RoHS

Mfr. Part # : PBSS5350Z-GK

Model Number : PBSS5350Z-GK

Package : SOT-223

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PBSS5350Z PNP Transistor - SOT-223

The PBSS5350Z is a PNP Plastic-Encapsulated Transistor designed for power management and peripheral driving applications. It is ideal for DC/DC converters, supply line switching, battery chargers, and linear voltage regulation (LDO). In peripheral driver applications, it is suitable for low supply voltage scenarios such as driving lamps and LEDs, as well as inductive loads like relays, buzzers, and motors. Key advantages include low collector-emitter saturation voltage, high collector current capability, and high collector current gain at high IC, leading to improved efficiency and reduced heat generation. This device is a complement to the PBSS4350.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings	BVCBO	IC = -100A, IE = 0			-60	V
	BVCEO	IC = -1mA, IB = 0			-50	V
	BVEBO	IE = -100A, IC = 0			-6	V
	IC	(DC)			-3	A
	ICM	Peak collector current			-5	A
	PC	Collector Power Dissipation				1.35	W
Electrical Characteristics	ICBO	VCB = -50V, IB = 0			-100	nA
	IEBO	VEB = -5V, IC = 0			-100	nA
	hFE	VCE= -2V, IC= -500mA	200
		VCE= -2V, IC= -1A	200
		VCE= -2V, IC= -2A	100
	VCE(sat)	IC = -500mA, IB = -50mA		-100		mV
		IC = -1A, IB = -50mA		-180		mV
		IC = -2A, IB = -200mA		-300		mV
	RCEsat	IC = -2A, IB = -20mA			150	m
	VBE(sat)	IC = -2A, IB = -20mA		-1.3		V
VBE(on)	VCE= -2V, IC= -1A		-1.1		V
fT	VCE = -5V, IC = -10mA		100		MHz
CC	VCB = -10V, IE=0, f=1MHz			40	pF
Thermal Characteristics	RJA	Free air; notes 1		92		/W
Thermal Characteristics	RJA	Free air; notes 2		62.5		/W

2509151638_GOODWORK-PBSS5350Z-GK_C51912409.pdf

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