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High Current Gain NPN Transistor JSMSEMI BC817 Suitable for AF Applications and Medium Power Circuits

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High Current Gain NPN Transistor JSMSEMI BC817 Suitable for AF Applications and Medium Power Circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 45V

Description : Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300mW Surface Mount SOT-23

Mfr. Part # : BC817

Model Number : BC817

Package : SOT-23

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Product Overview

The BC817-16/-25/-40 is an NPN general-purpose amplifier designed for AF applications. It offers complementary PNP type BC807, high collector current, high current gain, and low collector-emitter saturation voltage. This device is suitable for general-purpose medium power amplification and switching applications requiring collector currents up to 1.2mA.

Product Attributes

Brand: JSMICRO Semiconductor
Complementary PNP Type: BC807
Package Type: SOT-23

Technical Specifications

Type No.	Marking	Package Code	VCBO (V)	VCEO (V)	VEBO (V)	IC (mA)	PC (mW)	VCE(sat) (V)	VBE(sat) (V)	fT (MHz)	hFE (VCE=10V, IC=150mA)
BC817-16	6A	SOT-23	50	45	5	500	300	0.7	1.2	100	100-250
BC817-25	6B	SOT-23	50	45	5	500	300	0.7	1.2	100	250-600
BC817-40	6C	SOT-23	50	45	5	500	300	0.7	1.2	100	400-600

2306301523_JSMSEMI-BC817_C916383.pdf

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