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PNP Resistor Equipped Transistor Nexperia PDTA143ET215 AECQ101 Qualified SMD Package for Circuit Design

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PNP Resistor Equipped Transistor Nexperia PDTA143ET215 AECQ101 Qualified SMD Package for Circuit Design

Emitter-Base Voltage VEBO : 10V

Input Resistor : 4.7kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTA143ET,215

Model Number : PDTA143ET,215

Package : SOT-23

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Nexperia PDTA143E Series PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PDTA143E series comprises PNP resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs, making them a cost-saving alternative for digital applications. They are AEC-Q101 qualified, suitable for automotive and industrial segments, and are used for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Technology: Surface-Mounted Device (SMD)
  • Qualification: AEC-Q101 qualified
  • Resistor Values: R1 = 4.7 k, R2 = 4.7 k

Technical Specifications

Type Number Package NPN Complement Package Configuration Output Current (IO) R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio Collector-Emitter Voltage (VCEO)
PDTA143EE SOT416 (SC-75) PDTC143EE ultra small -100 mA 3.3 - 6.1 k (4.7 k Typ) 0.8 - 1.2 (1 Typ) -50 V
PDTA143EM SOT883 (SC-101) PDTC143EM leadless ultra small -100 mA 3.3 - 6.1 k (4.7 k Typ) 0.8 - 1.2 (1 Typ) -50 V
PDTA143ET SOT23 (TO-236AB) PDTC143ET small -100 mA 3.3 - 6.1 k (4.7 k Typ) 0.8 - 1.2 (1 Typ) -50 V
PDTA143EU SOT323 (SC-70) PDTC143EU very small -100 mA 3.3 - 6.1 k (4.7 k Typ) 0.8 - 1.2 (1 Typ) -50 V

Features and Benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design

Applications

  • Digital applications in automotive and industrial segments
  • Control of IC inputs
  • Switching loads

Pinning Information

Package Pin 1 Pin 2 Pin 3
SOT23; SOT323; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)

Ordering Information

Type Number Package Name Description Version
PDTA143EE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA143EM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm SOT883
PDTA143ET - plastic surface-mounted package; 3 leads SOT23
PDTA143EU SC-70 plastic surface-mounted package; 3 leads SOT323

Marking Codes

Type Number Marking Code
PDTA143EE 01
PDTA143EM DL
PDTA143ET *01
PDTA143EU *01

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -10 V
VI input voltage positive - +10 V
VI input voltage negative - -30 V
IO output current - - -100 mA
ICM peak collector current single pulse; tp 1 ms - -100 mA
Ptot total power dissipation Tamb 25 C; PDTA143EE (SOT416) - 150 mW
Ptot total power dissipation Tamb 25 C; PDTA143EM (SOT883) - 250 mW
Ptot total power dissipation Tamb 25 C; PDTA143ET (SOT23) - 250 mW
Ptot total power dissipation Tamb 25 C; PDTA143EU (SOT323) - 200 mW
Tj junction temperature - - 150 C
Tamb ambient temperature - -65 +150 C
Tstg storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air; PDTA143EE (SOT416) - - 830 K/W
Rth(j-a) thermal resistance from junction to ambient in free air; PDTA143EM (SOT883) - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air; PDTA143ET (SOT23) - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air; PDTA143EU (SOT323) - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A - - -900 A
hFE DC current gain VCE = -5 V; IC = -10 mA 30 - -
VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - - -150 mV
VI(off) off-state input voltage VCE = -5 V; IC = -100 A - -1.1 -0.5 V
VI(on) on-state input voltage VCE = -0.3 V; IC = -20 mA -2.5 -1.9 - V
R1 bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 bias resistor ratio - 0.8 1 1.2
Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Quality Information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

Package Outline

Refer to the document for detailed package outline drawings for PDTA143EE (SOT416/SC-75), PDTA143EM (SOT883/SC-101), PDTA143ET (SOT23), and PDTA143EU (SOT323/SC-70).

Packing Information

Type Number Package Description Packing Quantity
PDTA143EE SOT416 4 mm pitch, 8 mm tape and reel 3000, 5000, 10000
PDTA143EM SOT883 2 mm pitch, 8 mm tape and reel 5000, 10000
PDTA143ET SOT23 4 mm pitch, 8 mm tape and reel 3000, 5000, 10000
PDTA143EU SOT323 4 mm pitch, 8 mm tape and reel 3000, 5000, 10000

Soldering

Reflow soldering is the only recommended soldering method.


2410121745_Nexperia-PDTA143ET-215_C75552.pdf


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