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Rectifier diode FUXINSEMI MUR160 featuring glass passivated chip and 30 amp surge forward current capability

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Rectifier diode FUXINSEMI MUR160 featuring glass passivated chip and 30 amp surge forward current capability

Non-Repetitive Peak Forward Surge Current : 30A

Reverse Leakage Current (Ir) : 5uA@600V

Reverse Recovery Time (trr) : 50ns

Voltage - DC Reverse (Vr) (Max) : 600V

Diode Configuration : -

Operating Junction Temperature Range : -55℃~+150℃@(Tj)

Voltage - Forward(Vf@If) : 1.3V@1A

Current - Rectified : 1A

Description : 30A 50ns 600V 1.3V@1A 1A DO-41 Single Diodes RoHS

Mfr. Part # : MUR160

Model Number : MUR160

Package : DO-41

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Product Overview

The MUR160 is an ultra-fast recovery rectifier diode designed for high-speed rectification applications. It features a glass-passivated chip, high surge forward current capability, and a repetitive peak reverse voltage of 600V. With an average rectified output current of 1A, this diode is suitable for demanding electronic circuits requiring efficient and rapid switching.

Product Attributes

Brand: Fuxin (implied by website domain)
Chip Technology: Glass passivated

Technical Specifications

Item	Symbol	Unit	Conditions	MUR160
Repetitive Peak Reverse Voltage	VRRM	V		600
Average Rectified Output Current	IO	A	60Hz Half-sine wave, Resistance load, Tc(Fig.1)	1
Surge(Non-repetitive)Forward Current	IFSM	A	60Hz sine wave, 1 cycle, Ta=25	30
Storage Temperature	Tstg			-55 ~ +175
Junction Temperature	Tj			-55 ~ +150
Peak Forward Voltage	VFM	V	IF=1A, Ta=25	1.30
Peak Reverse Current	IRRM	A	VRM =VRRM, Ta=25	5
Peak Reverse Current	IRRM	A	VRM =VRRM, Ta=150	300
Reverse Recovery Time	Trr	ns	IF=0.5A, IRM=1A, IRR=0.25A	50
Thermal Resistance (Junction to Line)	RJ-L	/W	Between junction and Line	24

Features

Io: 1A
VRRM: 600V
Glass passivated chip
High surge forward current capability

Applications

Fast Rectification

Outline Dimensions

DO-41

2109070930_FUXINSEMI-MUR160_C2894303.pdf

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