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Low Gate Threshold Voltage N Channel MOSFET JingYang TNM2K30KX 30 Volt Ideal for Switching Circuits

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Low Gate Threshold Voltage N Channel MOSFET JingYang TNM2K30KX 30 Volt Ideal for Switching Circuits

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 300mA

Operating Temperature - : -55℃~+150℃

RDS(on) : 2Ω@1.8V,200mA

Gate Threshold Voltage (Vgs(th)) : 1V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 8pF

Number : 1 N-channel

Input Capacitance(Ciss) : 42pF

Pd - Power Dissipation : 350mW

Description : N-Channel 30V 0.3A 0.35W Surface Mount SOT-23

Mfr. Part # : TNM2K30KX

Model Number : TNM2K30KX

Package : SOT-23

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Product Overview

The TNM2K30KX-BI is an N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and easily designed drive circuits. This device is also easy to parallel and suitable for interfacing and switching applications.

Product Attributes

Brand: JY Electronics
Origin: China
Marking: 3N2K
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	VDS	VGS = 0V, ID = 250A	30			V
Zero Gate Voltage Drain Current	IDSS	VDS =28V,VGS = 0V			1	A
Gate Source leakage current	IGSS	VGS =8V, VDS = 0V			10	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID =250A	0.6	1.0		V
On Characteristics
Drain-Source On-Resistance	RDS(on)	VGS = 1.2V, ID =100mA		3
		VGS =1.5V,ID =200mA		2
		VGS =1.8V,ID =200mA		2
		VGS =2.5V,ID =200mA		1.6
		VGS =4.5V,ID =500mA		1.2
Forward Transconductance	gFS	VDS =3V, ID = 10mA	0.33			mS
Dynamic Characteristics
Input Capacitance	Ciss	VDS =5V,VGS =0V,f =1MHz		42		pF
Output Capacitance	Coss	VDS =5V,VGS =0V,f =1MHz		12.2		pF
Reverse Transfer Capacitance	Crss	VDS =5V,VGS =0V,f =1MHz		8		pF
Switching Characteristics
Turn-On Delay Time	td(on)	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25		15		ns
Rise Time	tr	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25		35		ns
Turn-Off Delay Time	td(off)	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25		70		ns
Fall Time	tf	VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25		70		ns
Maximum Ratings
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS				12	V
Continuous Drain Current	ID				0.3	A
Power Dissipation	PD				0.35	W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Thermal Resistance, Junction-to-Ambient	RJA			357		/W

2405091033_JingYang-TNM2K30KX_C3038096.pdf

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