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Drain to Source Voltage : 20V
Current - Continuous Drain(Id) : 750mA
Operating Temperature - : -55℃~+155℃
RDS(on) : 230mΩ@4.5V,0.55A
Gate Threshold Voltage (Vgs(th)) : 1.1V
Type : N-Channel
Reverse Transfer Capacitance (Crss@Vds) : 6pF
Number : 1 N-channel
Input Capacitance(Ciss) : 43pF
Pd - Power Dissipation : 150mW
Gate Charge(Qg) : 2nC@4.5V
Description : N-Channel 20V 0.75A 0.15W Surface Mount SOT-523
Mfr. Part # : TNM01K20FX
Model Number : TNM01K20FX
Package : SOT-523
The TNM01K20FX is an N-Channel enhancement mode MOSFET transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=250uA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=16VVGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=250uA | 0.45 | -- | 1.1 | V |
| Gate Leakage Current | IGSS | VGS=10VVDS=0V | -- | -- | 10 | uA |
| Drain-Source On-state Resistance | RDS(on) | VGS=4.5VID=0.55A | -- | 190 | 230 | m |
| VGS=2.5VID=0.45A | -- | 234 | 305 | m | ||
| VGS=1.8VID=0.35A | -- | 303 | 455 | m | ||
| Total Gate Charge | Qg | VGS=4.5VVDS=10VID=1A | -- | 2 | -- | nC |
| Gate- Source Charge | Qgs | -- | -- | 0.3 | -- | nC |
| Gate- Drain Charge | Qgd | -- | -- | 0.3 | -- | nC |
| Input Capacitance | Ciss | VGS=0VVDS=10Vf=1MHZ | -- | 43 | -- | pF |
| Output Capacitance | Coss | -- | -- | 9 | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | 6 | -- | pF |
| Continuous Diode Forward Current | ISD | VG=VD=0V , Force Current | -- | -- | 3.5 | A |
| Diode Forward Voltage | VSD | ISD=0.35AVGS=0V | -- | -- | 1.1 | V |
| Reverse Recovery Time | trr | IF = 1A di/dt = 100 A/s | -- | 9 | -- | nS |
| Reverse Recovery Charge | Qrr | -- | -- | 1 | -- | nC |
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N Channel MOSFET transistor JingYang TNM01K20FX for power switching and charging circuit efficiency Images |